《Table 1 Experimental parameters of NiO films sputtered under different volume flows of Ar and O2表1不

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《NiO/SiC异质结的光电特性（英文）》

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The NiO films were characterized by X-ray diffraction（XRD，SHIMADZU XRD-7000）and scanning electronic microscope（SEM，Zeiss sigma 500）.J-V measurements were obtained using the Keithley 6517B semiconductor characterisation system.