《Table 3Dispersion and nonlinear optical parameters of BI-diisoQ film as a function of film thicknes

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《Film thickness effects on nanorods organic films of azo quinoline derivatives for optical applications》

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where E is the photon energy，B is proportionality constant，and m is an index which has the probabilities of 2 for direct allowed transition and1/2 for the indirect allowed transition.To obtain the proper value of m，（αE）mwas plotted as a function of the photon energy（hν），as shown in Fig.6，and the best fit line was observed for m=1/2.This result emphasizes that the indirect allowed transition is the suitable adopted transition for BI-diisoQ films.The values of the onset optical band gap（Eg1）and the fundamental band gap（Eg2）were calculated particularly from the intersection of the linear portions with the energy axis.The first band energy value（Eg1），which is terminated as the optical gap of the thin film，is affected by the formation of vacancies，interstitials Frenkel pairs or dislocations inside the film microstructure[31，32].Whereas，the fundamental gap energy（Eg2）occurs due to the electron transition between（HUMO，π-band）and（LUMO，π*-band）[33].The values of Eg1and Eg2for different film thickness were listed in Table 2.