《Table 1.Some works on etch rate and etch surface RMS of GaN.》

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《Implementation of slow and smooth etching of GaN by inductively coupled plasma》

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ΔRMS=RMS（after etching）–RMS （before etching）

Four sets of experiments were conducted to study the effect of etching process parameters of ICP power，RF power，flow rate of Cl2 and BCl3 on the etch rate（ER）and etch surface roughness（RMS），respectively.The detailed etching parameters for different samples are listed in Table 2.All etching processes were performed at 8 mTorr chamber pressure，5 sccm Ar and etch time 250 s.Then put all etched samples into the splitter to remove the photoresist.Finally，the groove structures were measured by AFM to give out the etch rate and RMS roughness.The scanning area is 20×20μm2.