《Table 2 Parameters of the PS solar cell for different etching time表2不同刻蚀时间下多孔硅太阳电池的参数》

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《表面多孔硅层对单晶硅太阳电池性能的影响（英文）》

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Fig.7 shows the current-voltage characteristics of the experimental solar cells with porous layer for the etching time of 3 min，4min，5 min and6 min under 850℃and rapid thermal phosphorus diffusion for 40 s，using the standard AM1.5 solar illuminations.It is obvious that etching for 4 min is the best condition.The corresponding electrical parameters include the open circuit voltage（Voc），short circuit current density（Jsc），fill factor（FF）and efficiency（η），all which are given in Table 2.The short-circuit current density increases from24to 27.99 mA/cm2 after the realization of PS for4 min rather than 3 min，while it decreases to19.55 mA/cm2 and 18.01 mA/cm2 after etching for5 min and 6 min，respectively.As a result，the efficiency increases to about 12.32%after etching for4 min，the open-circuit voltage increases to0.49 V and fill factor reaches 71%.According to these results，the improvement of the J-Vcharacteristics can be attributed to larger contact areas due to the PS layer vertical columnar structure，and then to an enhancement of the current collection and reduction of the surface recombination via the PS layer[30].