《Tab.2The Structural parameters of ZAO thin films at different deposition temperatures》

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《氧气分压和衬底温度对铝掺杂氧化锌透明导电薄膜性能的影响（英文）》

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Fig.6shows the change of the resistivity of the films as a function of the deposition temperature for ZAO thin films.As the deposition temperature increases，the resistivity decreases sharply at temperature below 400℃，this decrease in resistivity may be related to the decrease of the grain-boundary defect in the thin film and the improvement of the crystalline quality.However，as the deposition temperature further increases，the resistivity increases slightly.This is probably the result of that high temperature can cause the slight damage of the thin film in crystalline quality，which is confirmed by the results of XRD measurements，and then the carrier mobility in the thin film was lowered.