《Table 2 Preparation conditions and properties of the ITO thin film sample》

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《直流电弧等离子体法制备In(Sn)-O及Sn(In)(Sb)-O系纳米颗粒（英文）》

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Fig.4a shows the SEM images of the ITO target，it is found that ITO target prepared by DC arc plasma is very dense and the grain size is relatively small.Numerous small grains exist near the grain boundary，which are all secondary phases In4Sn3O12[26].Additionally，the ITO thin film sample was synthesized by DC magnetron sputtering，and the prepared ITO target was used as a sputtering source.Fig.4b shows the optical properties of ITO thin films，the transmittance of ITO thin films deposited under the conditions（Table 2）is over 85%.The results（Table 2 and Fig.4b）of the ITO thin film sample shows that the film has good optical and electrical properties，indicating that the ITO nanoparticles synthesized by the DC arc plasma method can be used for the preparation of ITO targets，and the various properties of the film meets the requirements of flat panel displays.