《Table 3.Summary of the forward voltage drop (VF) and the reverse blocking voltage (VR) obtained fro

《Table 3.Summary of the forward voltage drop (VF) and the reverse blocking voltage (VR) obtained fro   提示:宽带有限、当前游客访问压缩模式
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《Impact of design and process variation on the fabrication of SiC diodes》


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Initially,we will discuss the electrical characteristics of4 A diodes.All the measurements are done at room temperature.In Table 1,different design variations used to fabricate the diodes are listed.In total,diodes with three different stripe designs(d1–d3)and 5 segments designs(d4–d7)have been fabricated.