《Table 2.Summary of the forward voltage drop (VF) and the reverse blocking voltage (VR) obtained fro
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《Impact of design and process variation on the fabrication of SiC diodes》
*The minimum and maximum values of IR at 1.9 kV for wafer 5 are 1.64×10-4 and 9.47×10-4 A respectively.
Initially,we will discuss the electrical characteristics of4 A diodes.All the measurements are done at room temperature.In Table 1,different design variations used to fabricate the diodes are listed.In total,diodes with three different stripe designs(d1–d3)and 5 segments designs(d4–d7)have been fabricated.
图表编号 | XD00188453700 严禁用于非法目的 |
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绘制时间 | 2018.11.01 |
作者 | Y.K.Sharma、Huaping Jiang、Changwei Zheng、Xiaoping Dai、Yangang Wang、I.Deviny |
绘制单位 | Dynex Semiconductor Ltd、Dynex Semiconductor Ltd、Zhuzhou CRRC Times Electric Co.Ltd.、Dynex Semiconductor Ltd、Zhuzhou CRRC Times Electric Co.Ltd.、Dynex Semiconductor Ltd、Zhuzhou CRRC Times Electric Co.Ltd.、Dynex Semiconductor Ltd、Dynex Semiconductor Ltd |
更多格式 | 高清、无水印(增值服务) |
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