《Table 3 Characteristics of equivalent electrical circuit derived from the EIS in 3.5 wt%Na Cl solut
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《多弧离子镀-磁控溅射复合技术制备TiCN薄膜的耐蚀性研究(英文)》
It can be seen from the polarization curves of Fig.6 and kinetic parameters of Table 4 that the electrochemical behaviors of Ti CN films and the substrate are different.Ti CN-coated SS304 present a more positive corrosion potential than the substrate,shifted it by only-0.186 V at the duty ratio of 40%.This illustrates that the anode reaction rate of films is retarded and needs a higher potential for moving the Cl-across the film/substrate with freedom.Meanwhile,the lower icorr and the higher Rp of Ti CN films than those of the substrate imply that the corrosion rate of coated samples is lower.As the duty ratio increases,the corrosion current density of Ti CN films obtains the minimal value of 3.262×10-7A·cm-2 at the duty ratio of 40%,suggesting a homogeneous and stable structure since it doesn’t dissolve,which expresses a better resistance to uniform corrosion.As shown in Fig.6,Ti CN films deposited at different duty ratios exhibit a continuous and slow increase of the corrosion current density with the potential growing,but the current density near 0.74 V(30%)>1.0 V(40%),0.79 V(50%),0.59 V(30%)increases sharply,higher than that of the substrate(0.15 V),which is probably related to the stable pitting process occurring with t h e f i l m/s u b s t r a t e i n t e r f a c e d u e t o t h e c o n t i n u o u s penetration of the electrolyte that reaches the metal substrate through the permeable defects of films.This also illustrates that Ti CN films present a favorable pitting corrosion resistance in comparison with the bare metal substrate.Y.Cheng et al[43]have also found that the Ti CN films is effective to improve the anticorrosive property of metallic substrate.While the current density of the substrate displays a dramatic rise when the potential is 0.122 V,indicating the breakdown of passivity and initiation of pitting corrosion,which is in agreement with above discussed results.
图表编号 | XD0011252000 严禁用于非法目的 |
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绘制时间 | 2018.07.01 |
作者 | 任鑫、赵瑞山、王玮、宋晓龙、张洋、张翀翊 |
绘制单位 | 辽宁工程技术大学、辽宁工程技术大学、辽宁工程技术大学、辽宁工程技术大学、辽宁工程技术大学、辽宁工程技术大学 |
更多格式 | 高清、无水印(增值服务) |
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