《Table 1 Photovoltaic properties of the inverted devices under AM 1.5 G, 100 mW·cm–2.》

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《含萘并二噻吩小分子受体材料的带隙调控及其在非富勒烯太阳能电池中的应用（英文）》

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a The average PCEs in the parentheses are based on 8 devices.

As mentioned before，DTNIT has a relative low bandgap of1.52 eV.Therefore，PBDB-T，a benchmark large bandgap copolymer，was used as the donor material to blend with the DTNIT acceptor.PSCs were fabricated by using an inverted device architecture of indium tin oxide（ITO）/ZnO/PBDB-T:DTNIT/MoO3/Ag.The active layers were solution-processed by spin-coating，and no additives and post-treatments were used.Device parameters of the inverted PSCs are summarized in Table1，and the current density-voltage（J–V）characteristics of the best performance device are shown in Fig.4a.As shown in Fig.4a，the best performance device based on PBDB-T:DTNIT exhibited a PCE of 7.05%with a VOC of 0.91 V，a JSC of 14.42m A·cm–2，and a FF of 53.72%.For comparison，in Table 1 we also listed the photovoltaic parameters of PBDB-T:PC71BM-based devices and PBDB-T:DTNIC8-based devices which had been fabricated under the same conditions previously.As shown in Table 1，DTNIT showed comparable PCEs with PC71BM when both the acceptors were blended with PBDB-T.It is noteworthy that the JSC of 14.42 mA·cm-2 for PBDB-T:DTNIT-based device is much larger than that for the PBDB-T:PC71BM-based device（12.45 mA·cm-2）which is mainly attributed to the broadened absorption of DTNIT in comparison with PC71BM.Compared to DTNIC8，DTNIT exhibited bathochromically shifted absorption thereby leading to the enhanced JSC as well. However，with the decreased FF and VOC，PBDB-T:DTNIT-based device showed an inferior PCE compared to the DTNIC8-based counterpart 23.The electron mobility of DTNIT measured using the space-charge limited current（SCLC）method is 2.94×10-5 cm2·V-1·s-1，which is similar to that of DTNIC8（2.80×10-5 cm2·V-1·s-1）23.