《Table 1表1：磁控溅射制备纳米晶GZO/CdS双层膜及GZO/CdS/p-Si异质结光伏器件的研究（英文）》

  提示：宽带有限、当前游客访问压缩模式

本系列图表出处文件名：随高清版一同展现

《磁控溅射制备纳米晶GZO/CdS双层膜及GZO/CdS/p-Si异质结光伏器件的研究（英文）》

1. 获取 高清版本忘记账户？点击这里登录

1. 下载图表忘记账户？点击这里登录

However，we could not observe any photovoltaic effect of GZO/p-Si heterojunction solar cell，which did not contain a CdS buffer layer（Fig.9）.Fig.10 and Table.1 show the crystal structure of GZO，CdS and Si.The ZnO:Ga is wurtzite structure，while the crystal structure of silicon is diamond structure.The lattice constant ofGZO is 3.25，while the lattice constant of Si is 5.42.The lattice mismatch between GZO and Si is as high as40%.There are so many interface states between GZO and p-Si.CdS is an n type semiconductor，and the crystal structure is wurtzite structure.The lattice constant of CdS is 4.14，which is between GZO and Si.Therefore，it can be used for a buffer layer between GZO and Si，and it can also effectively reduce the interface states between GZO and p-Si.So we observed the clear photovoltaic effect of GZO/CdS/p-Si heterojunction.