《表2 八边形SPAD和圆形SPAD结构尺寸表》

  提示：宽带有限、当前游客访问压缩模式

本系列图表出处文件名：随高清版一同展现

《高边缘击穿和扩展光谱的圆形单光子雪崩二极管（英文）》

1. 获取 高清版本忘记账户？点击这里登录

1. 下载图表忘记账户？点击这里登录

The proposed circular SPAD device with p+/deep n-well junction allows active multiplying junctions with deep n-well shallow n-type doping，increases the depletion layer width compared to the other SPADs，and detects light over a wide spectrum and long wavelength；however，its PDP is relatively low.As shown in the diagram，the loss region is relatively thick and it is to some extent beneficial to enhancing the spectral response.