《表1[CuI (L1) 4] (Cl O4) 2的单晶结构数据》
本系列图表出处文件名:随高清版一同展现
《新型四硫富瓦烯-吡啶型半导体材料的制备、晶体结构及电学性能表征(英文)》
X-ray diffraction data were collected on a Bruker SMARTCCDdiffractometeratroom temperature with a graphite monochromated Mo Kαradiation(λ=0.71070).The crystal structure was solved by direct methods within SHELXS-97[19],and refined by full matrix least-squares methods on F2by means of SHELXL-97.All non-hydrogen atoms were refined anisotropically.The hydrogen atoms were introduced at calculated positions.Final refinement was performed with modification of the structure factors for contribution of the disordered solvent electron densities using the SQUEEZE option of PLATON[20].Details of crystal data,data collections,and structure refinement are summarized in Tab.1.All data(except structure factors)have been deposited with the Cambridge Crystal-lographic Data Centre as supplementary publications CCDC1864958 for[CuI(L1)4](ClO4)2in this paper.Copies of the data can be obtained free of charge by application to CCDC,12 Union Road,Cambridge CB21EZ,UK([email protected]).
图表编号 | XD0066045800 严禁用于非法目的 |
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绘制时间 | 2019.07.18 |
作者 | 王乐佳、肖宁、孙青、沈梁钧、李晓芳、肖勋文 |
绘制单位 | 宁波工程学院材料与化学工程学院、宁波大学材料科学与化学工程学院、宁波工程学院材料与化学工程学院、宁波工程学院材料与化学工程学院、湖南科技大学化学化工学院、宁波工程学院材料与化学工程学院 |
更多格式 | 高清、无水印(增值服务) |