《Table 2 Number of read errors in test》
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《Total ionizing dose and synergistic effects of magnetoresistive random-access memory》
MTJ is written by magnetic fields;in other words,the MRAM is easily affected by strong magnetic fields.Strong magnetic fields from various astronomical bodies in space,solar flares,and the magnetic torque of spacecrafts would affect the reliability of MRAM devices.Table 1 lists some values of magnetic field strengths found in the universe[1].At the same time,electrons and protons in the Van Allen belt add to the total ionizing dose(TID)on MRAM devices in space.MRAM is influenced by synergistic effects,which blend the total ionizing dose with the magnetic field in real outer space environments.
图表编号 | XD0025764900 严禁用于非法目的 |
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绘制时间 | 2018.08.01 |
作者 | Xing-Yao Zhang、Qi Guo、Yu-Dong Li、Lin Wen |
绘制单位 | Key Laboratory of Functional Materials and Devices for Special Environments,Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences、Xinjiang Key Laboratory of Electronic Information Material and Device、Key Laboratory of Functiona |
更多格式 | 高清、无水印(增值服务) |
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