《Table 1 Summarized IDS, μand RS of the different OFETs exposed to NH3vapor in N2background with var

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《调节晶粒尺寸来提高有机场效应晶体管的化学传感性能（英文）》

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Chemical sensing performances of the OFETs were evaluated using ammonia（NH3）as the analytes.NH3detection is promising and important in industrial security，environment monitoring and biomedical applications，and the NH3analytes would induce the charge trapping and quenching effects to the charge carriers conducting in the DNTT[12].The OFETs were measured in a homemade test chamber under nitrogen（N2）atmosphere and then NH3vapors were injected at different concentrations of 1 and 5 ppm（v/v）.Fig.3a–c show the transfer characteristic curves of the series of OFETs upon exposure to NH3at different concentrations.The IDSof all the OFETs decreased after the devices were exposed to NH3vapor.The OFET fabricated under lower Tsubexhibited more significant response than that evaporated under higher Tsubat all NH3concentrations.It should be noted that the sensing performances of the OFETs could also be affected by their different charge mobilities.Therefore，normalized currents and mobilities were calculated to evaluate the influence of the grain size on the sensing performances.Fig.3d–f present the changes of IDS（VDS=-40 V and VGS=-40 V），μand threshold voltage（Vth）for the different OFETs exposed to NH3vapor as compared to N2background.In all the figures，OFET fabricated under the lowest Tsubshows the highest parameter changes.If we define RS as the percentage of IDS change per ppm analyte concentration，the RS of the OFET fabricated under 80°C exposed to 1 ppm NH3vapor is 4.5%ppm-1，while that of the device evaporated under 25°C is 22%ppm-1（Fig.3d）.By adjusting Tsub，the RS of the OFET to NH3vapor can be enhanced up to 5times.Detailed IDS，μand RS of the different OFETs exposed to NH3with different concentrations were summarized in Table 1.It should be noted that the Tsubalmost have no effect on the crystalline feature of the DNTT films according to the previous literature[26].Therefore，the OFET fabricated under lower Tsubpossesses smaller grain size，and thus gives more interval space in the DNTT films for the NH3molecules to diffuse through，resulting in higher sensitivity.Moreover，the error bars in Fig.3d–f are with limited length，indicating high stability of the OFET-based sensors.