《Table 1.The geometric parameters of transformer.》

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《4-port digital isolator based on on-chip transformer》

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Here，L is the equivalent inductance of the transformer，which is directly determined by the area of the transformer.C is the parasitic gate capacitance of the cross-coupled NMOS transistor.In order to satisfy the desired oscillation frequency，the on-chip transformer has been designed.In the case that the transformer area is limited to 500μm2，the coil with more turns can gain greater inductance to reduce the switching loss.The on-chip stacked spirals transformer with its center tape connected to Vin is designed by the 3D finite element modeling（FEM）tool.The geometric parameters of the primary and secondary coil of the transformer include outer diameter（Dout），trace width（w），trace separation（s），thickness（t），and turns（N），as shown in Table 1.At 320 MHz，the simulated inductance and quality factor for primary and secondary coils are 216 nH，262 nH，2.1，and 1.1，respectively.