《表3 双异质结的有效载流子寿命》

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《InGaAsP/InGaAs双结太阳电池的开路电压损耗抑制（英文）》

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It is well established that SL serve as effective barrier for element diffusion or intermixing，and dislocation threading，and it has been widely used in semiconductor devices such as high electron mobility transistors，laser diodes，electro absorption modulators[12-16].Also，the miniband in SL would not introduce extra potential barrier for carrier transport[17].An initial five-period InP（2nm）/InAlAs(2nm）SL BSF layer is designed and employed in bottom InGaAs subcell of DJSC.A Vocof 997.5mV，a Jsc of 15.8 mA/cm2and an FF of 0.824 are obtained as in Fig.8.Both Vocand Jsc are boosted，as expected，in fabricated SL BSF device.The Vocapproaches1.0 V，resulting in a Woc of 752.5 mV.A reduction of30 mV in Vocloss for DJSC is achieved，compared with the conventional InP BSF DJSC.