《Tab.1 Sample layer structure》

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《基于GaAs膜的GaInP/AlGaInP无杂质空位扩散诱导量子阱混杂的研究（英文）》

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The laser structure in this work was grown on Si-doped（100）Ga As substrate with a misorientation of 10°towards（111）A by low pressure MOVPE.Epitaxial growth was carried out in an AIX200 system which contains a horizontal reactor.During the epitaxy，the growth temperature was controlled at 650-725℃and the growth pressure was about 5 000 Pa.The source materials were trimethylaluminium（TMAl），arsine（As H3）and phosphine（PH3）.The p-type dopant was silane（Si H4）.The carrier gas was palladium-diffused hydrogen.All layers include the following sequence from the substrates:a Si-doped 200-nm-thick n-Ga In P buffer layer，a Si-doped 1 000-nm-thick n-Al0.7Ga In P cladding layer（dopant concentration n= （5-8）×1017cm-3） ，a compressively strained single-quantum-well（SQW）structure（barrier:Al Ga In P:350nm，well:Ga In P:9 nm），a Zn-doped 1 000-nmthick Al Ga In P cladding layer（dopant concentration p= （1-2）×1018cm-3） ，and a higher p-doped contact layers（dopant concentration p= （1-2）×1020cm-3） ，including a 50-nm-thick Ga In P layer and a100-nm-thick Ga As layer.A schematic diagram of the layers&apos；structure is given in Tab.1.The laser was designed to have a peak emission at 660 nm.Fig.1shows the photoluminescence（PL）spectrum at RT.