《SOLID-STATE PHYSICS》

The Properties and Applications of the Hg1-xCdx Te Alloy SystemBy R.Dornhaus and G.Nimtz.With 98Figures1

1. Introduction1

2. The Crystal3

2.1Basic Properties3

2.2 Phase Diagram and Crystal Growth5

2.3Imperfections7

2.3.1 Dislocations and Native Point-Defects7

2.3.2 Foreign Atoms9

3. Band Structure10

3.1Band Structure Calculation11

3.1.1 KKR-Model Calculations12

3.1.2 Pseudopotential Calculations15

3.1.3 Tight Binding Model20

3.2 The Semimetal-Semiconductor-Transition22

3.3The Band Edge-Characteristics23

3.3.1 The Three Level Model of a Small-Gap Semiconductor23

3.3.2 Statistics27

3.3.3Comparison Between Theoretical and Experimental Results29

3.3.3.1 The Dependence of the Energy Gap Eo on Composition x，Temperature T and Pressure p29

3.3.3.2 Effective Masses31

3.3.3.3 g-Factor of Conduction Electrons34

3.3.3.4 Higher Interband Energy Gaps35

3.4 Temperature Dependence of the Band Gap40

3.5 Pressure Effects on the Band Structure45

3.6 The Disorder Problem in Pseudo Binary Alloys48

4. Transport Properties54

4.1Hall Coefficient，Intrinsic Carrier Density54

4.2 Carrier Mobility，Scattering Mechanisms61

4.3 Magnetoresistance65

4.4Magnetic Quantum Effects69

4.4.1 Shubnikov-de Haas Effect70

4.4.2 Magnetophonon Effect73

4.4.3 Cyclotron Resonance73

4.4.4 Electron-Spin and Combined Resonance76

4.4.5 Spin-Flip Raman Scattering78

4.4.6 Various Other Quantum Effects79

4.5 Hot Carrier Properties80

4.6 Thermoelectric Effects82

4.7 Magnetic Susceptibility84

5.Optical Properties86

5.1Fundamental Reflectivity and Absorption86

5.1.1 Reflectance and Absorption86

5.1.2 Magnetoreflectance89

5.1.3 Electroreflectance89

5.2 Optical Phonons90

5.3 Free Carrier Absorption and Reflectance94

6.Infrared Devices95

6.1Recombination Mechanisms and Carrier Lifetime95

6.2 Photoconductivity99

6.3 Photovoltaic Effects101

6.4 Infrared Radiation Sources103

Acknowledgements106

Notes Added in Proof106

List of Important Symbols109

Numerical Values of Important Quantities111

References112

Resonant Raman Scattering in SemiconductorsBy W.Richter.With 54 Figures121

1.Introduction121

2.Electric Susceptibility123

2.1Direct Transitions124

2.2 Indirect Transitions130

2.3 Excitons131

3.Light Scattering133

3.1Scattering Cross Section133

3.2Transition Susceptibility （Raman Tensor）136

3.2.1Phenomenological Treatment136

3.2.2 Microscopic Theory140

3.3Selection Rules145

4.Experimental Methods150

4.1Apparatus150

4.1.1Laser152

4.1.2 Monochromators154

4.1.3 Light Detection155

4.2Evaluation of Cross Sections157

4.2.1The Scattered Power as a Function of the Optical Constants157

4.2.2 The Determination of the Cross Section and Its Frequency Dependence164

5.One-Phonon Deformation Potential Scattering170

5.1Diamond- and Zincblende-Type Semiconductors173

5.1.1Deformation Potentials177

5.1.2 E0-Gap183

5.1.3 E1-Gap196

5.1.4 E1-Gap Under Uniaxial Stress205

5.2Wurtzite-Type Materials213

5.3VIb-Semiconductors217

5.4Vb-Semimetals221

5.5Mg2X-Compounds （X = Si，Ge，Sn，Pb）224

5.6Other Materials228

6.Infrared-Active LO Phonons228

6.1Frohlich Interaction230

6.2Allowed LO Scattering232

6.3Forbidden LO Scattering233

6.3.1Forbidden LO Scattering at Fundamental Gaps234

6.3.2 Forbidden LO Scattering at Higher Gaps236

7.Multiphonon Scattering244

7.1Second-Order Raman Scattering245

7.2Microscopic Theory of the Two-Phonon Raman Processes248

7.3Two-Phonon Deformation Potential Scattering in Diamond-Zincblende-Type Semiconductors250

7.3.1 E0-Gap253

7.3.2 E1-Gap255

7.3.3 Evaluation of Two-Phonon Deformation Potentials258

8.Conclusions262

Acknowledgements264

List of Symbols264

References267

Subject Index273