《林兰英论文选》

1.Expansion of Potassium and Sodium Chloride Crystals Due to X－Ray Irradiation of Weak Intensities1

2.锑化铟的机械损伤25

3.锑化铟的热处理41

4.杂质和缺陷在砷化镓中的行为59

5.砷化镓材料热学稳定性的初步研究-N+型外延工艺热循环引起的退化107

6.半导体中的缺陷132

7.LPE—GaAs中残留杂质的研究163

8.GROWTH AND PROPERTIES OF HIGH PURITY LPE-GaAS168

9.氢对氢化无定型硅能隙的影响188

10.原生直拉无位错硅单晶中漩涡缺陷的观察201

11.掺锢低拉错密度的半绝缘砷化镓215

12.用离子自注入改善SOS单晶膜质量的研究221

13.A possible model:Photothermal excitation via an excited state in the Si:Pd level238

14.直拉硅单晶中的新施主247

15.IDENTIFICATION OF NEUTRAL NEW DONOR RELATED COMPLEX LUMINESCENCE CENTER IN CZOCHRALSKI SILICON255

16.微重力条件下生长GaAs单晶的电学和光学性质研究261

17.太空生长掺Te-GaAs单晶的结构缺陷观测271

18.LEC GaAs中缺陷的光致发光研究283

19.n型LEC—GaAs中E5能级研究294

20.PREPARATION AND PROPER TIES OF GaAs SINGLE CRYSTAL GROWN FROM MELT UNDER MICROGRAVITY CONDITIONS301

21.A bsorption peaks at 2663 and 2692cm-1 observed in neutron-transmutation doped silicon316

22.硅中与钯相关的深能级研究327

23.掺In半绝缘GaAS衬底上外延GaAs的晶格失配研究339

24.A novel model of “new donors” in Czochralski-grown silicon348

25.NEUTRON IRRADIATION INDUCED PHOTOLUMINESCENCE FROM SILICON CRYSTAL GROWN IN AMBIENT HYDROGEN361

26.INFLUENCE OF In CONTENT ON DEFECTS OF LPE GaAs EPILAYERS370

27.SPATIAL DISTRIBUTIONS OF IMPURITIES AND DEFECTS IN Te- ANDSi-DOPED GaAs GROWN IN A REDUCED GRAVITY ENVIRONMENT387

28.AIxGa1-xAsySb1-y/GaSb的LPE生长与性质研究404

29.Electrical Characteristics of GaAs grown from the melt in a reduced-gravity environment419

30.OPTICAL PROPERTIES OF AlxGa1-xAsySb1-y BY LIQUID PHASE EPITAXY432

31.SI-GaAs单晶热稳定性及其电学补偿机理研究445