《表1 eGaN FET buck变换器和Si ZVS buck变换器的规格说明》

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《基于氮化镓场效应晶体管的高性能48 V总线电源（英文）》

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A 48 V，10 A synchronous buck converter was designed and built using two 100 V rated，16 A capable EPC2045 eGaN FETs as shown in Fig.4.The output inductor and switching frequency were optimized according to the methodology described in[19]for high power density and efficiency.The specifications of the eGaN FET-based hard-switched converter and the evaluation board for the Si-based ZVS power module PI3546[12]are compared in Tab.I.The total system efficiency comparison between these two converters as a function of output current is shown in Fig.5.It indicates that the e GaN FET-based hard-switched converter has a peak efficiency of 97.1%；this includes the power stage and PCB trace losses and gate driver power consumption.It is capable of achieving0.8%～1.1%higher efficiency than the ZVS power module in the load current range from 2 A to 10 A for asimilar power density.